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Chinese Researchers Achieve Breakthrough in Flash Memory TechnologyInnovative Graphene Channel Delivers Unprecedented Write Speeds and Reliable Storage“PoX” Device Targets AI Needs with Low Power Consumption and Exceptional Speed
A research team in China has announced the development of what is believed to be the fastest non-volatile semiconductor memory device ever created, boasting a remarkable write speed of one bit every 400 picoseconds.
Dubbed “PoX” (Phase-change Oxide), this advanced two-dimensional graphene-channel flash device was developed at Fudan University in Shanghai.
Utilizing a Dirac graphene channel in conjunction with a charge-trapping stack, the PoX device operates more quickly than the access times usually linked to volatile memory types like SRAM and DRAM, which range from 1 to 10 nanoseconds. To provide context, a picosecond is one-thousandth of a nanosecond.
Paving the Way for Future Applications
While volatile memory solutions like SRAM and DRAM excel in speed, they lose stored data once power is cut. In contrast, non-volatile flash memory retains data without power but typically suffers from higher latency—often in the tens of microseconds at the NAND level. The PoX device strives to close this performance gap by combining speed with persistent data storage.
This groundbreaking graphene-based device employs a two-dimensional hot-carrier injection technique. Its ultra-thin structure enhances horizontal electric fields, thereby boosting carrier acceleration and injection efficiency. Operating at 5V, it achieved its remarkable 400 picosecond write speed while sustaining performance across over 5.5 million cycles. Additionally, long-term retention tests indicated data stability over a simulated duration of 10 years.
Lead researcher Zhou Peng remarked, “By leveraging AI algorithms to refine process testing conditions, we have made significant advancements in this innovation, laying the groundwork for its future applications.”
He further stated, “Our technological breakthrough is set to not only transform the global storage technology landscape but also drive industrial upgrades and create new application scenarios, while providing substantial support for China to lead in these critical areas.”
Liu Chunsen, another member of the research team, highlighted that they have produced a fully functional chip and are now focused on integrating it into current devices.
“The next phase involves embedding it in smartphones and computers,” he explained. “This integration will help eliminate existing bottlenecks like lag and overheating when deploying local models.”
Via Nature
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